Rate constants for the reaction of H2 with defects at the SiO2/Si(111) interface
- 1 June 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (11) , 7999-8004
- https://doi.org/10.1063/1.373486
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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