Quantum cascade lasers grown by metalorganic vapor phase epitaxy
- 16 June 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (24) , 4221-4223
- https://doi.org/10.1063/1.1583858
Abstract
We report the growth of GaAs-based quantum cascade lasers using atmospheric pressure metalorganic vapor phase epitaxy. The necessary control of interface abruptness and layer thickness uniformity throughout the structure has been achieved using a horizontal reactor in combination with individually purged vent/run valves. A low-temperature threshold current density of 10 kA/cm2 and maximum operating temperature of 140 K have been measured. These performance levels are comparable with early GaAs-based devices grown using molecular-beam epitaxy. The measured emission wavelength (λ∼11.8 μm) is approximately 3-μm longer than the calculated transition wavelength, which we explain using a model incorporating compositional grading of the active region barriers.Keywords
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