High speed logic operations of all refractory Josephson integrated circuits
- 15 July 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (2) , 213-215
- https://doi.org/10.1063/1.94259
Abstract
A chain circuit of four-junction logic gates consisting of all refractory junctions with niobium nitride (NbN)-niobium (Nb) double-layered electrodes has been fabricated with a 2.5-μm minimum feature. A reactive ion etching technique has been used for patterning every layer such as junction electrodes, molybdenum resistors, and insulation layers. The minimum logic delay of 18 ps/gate has been obtained in the experimental circuit.Keywords
This publication has 13 references indexed in Scilit:
- All refractory Josephson tunnel junctions fabricated by reactive ion etchingIEEE Transactions on Magnetics, 1983
- High quality refractory Josephson tunnel junctions utilizing thin aluminum layersApplied Physics Letters, 1983
- New fabrication process for Josephson tunnel junctions with (niobium nitride, niobium) double-layered electrodesApplied Physics Letters, 1982
- Quasi-static operation of Josephson Atto - Weber switches (JAWS) fabricated using the selective niobium anodization process (SNAP)IEEE Transactions on Magnetics, 1982
- Niobium nitride-niobium Josephson tunnel junctions with sputtered amorphous silicon barriersApplied Physics Letters, 1982
- Operating Characteristics of Josephson Four-Junction Logic (4JL) GateJapanese Journal of Applied Physics, 1982
- Selective niobium anodization process for fabricating Josephson tunnel junctionsApplied Physics Letters, 1981
- Niobium nitride Josephson tunnel junctions with oxidized amorphous silicon barriersApplied Physics Letters, 1981
- Niobium oxide-barrier tunnel junctionIEEE Transactions on Electron Devices, 1980
- Current Injection Logic Gate with Four Josephson JunctionsJapanese Journal of Applied Physics, 1980