Threshold and subthreshold characteristics theory for a very small buried-channel mosfet using a majority-carrier distribution model
- 1 April 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (4) , 301-308
- https://doi.org/10.1016/0038-1101(81)90021-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Device Design Considerations for Ion Implanted n-Channel MOSFETsIBM Journal of Research and Development, 1975
- Design of ion-implanted MOSFET's with very small physical dimensionsIEEE Journal of Solid-State Circuits, 1974
- Subthreshold characteristics of insulated-gate field-effect transistorsIEEE Transactions on Circuit Theory, 1973