Threshold voltage theory for a short-channel MOSFET using a surface-potential distribution model
- 31 December 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (12) , 1045-1051
- https://doi.org/10.1016/0038-1101(79)90009-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Drain-voltage dependence of IGFET turn-on voltageSolid-State Electronics, 1977
- A simple approach for accurately modeling the threshold voltage of short-channel mostsSolid-State Electronics, 1977
- A simple theory to predict the threshold voltage of short-channel IGFET'sSolid-State Electronics, 1974
- An analysis of the threshold voltage for short-channel IGFET'sSolid-State Electronics, 1973
- Conductance of MOS transistors in saturationIEEE Transactions on Electron Devices, 1969