16% external quantum efficiency from planar microcavityLEDsat 940 nm by precise matching of cavity wavelength

20 July 1995

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 31 (15) , 1286-1288
https://doi.org/10.1049/el:19950884

Abstract

High efficiency substrate emitting microcavity InGaAs/(Al)GaAs 3 QW LEDs are reported. The use of regrowth for cavity resonance tuning and its effect on device performance, are demonstrated. The best results obtained include external quantum efficiencies of 16%. At 5 mA, 1 mW of optical power is delivered with an intensity of 280 µW/sr.

Keywords

This publication has 4 references indexed in Scilit:

High efficiency planar microcavity LED's: comparison of design and experiment
IEEE Photonics Technology Letters, 1995
6% external quantum efficiency from InGaAs/(Al)GaAssingle quantum well planar microcavity LEDs
Electronics Letters, 1994
Highly Efficient Light-Emitting Diodes with Microcavities
Science, 1994
Increased fiber communications bandwidth from a resonant cavity light emitting diode emitting at λ=940 nm
Applied Physics Letters, 1993