6% external quantum efficiency from InGaAs/(Al)GaAssingle quantum well planar microcavity LEDs
- 13 October 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (21) , 1787-1789
- https://doi.org/10.1049/el:19941216
Abstract
High efficiency substrate emitting microcavity InGaAs/(Al)GaAs single QW LEDs are reported. The influence of the reflectivity of the bottom GaAs/AlAs DBR and cavity dimensions have been investigated. The best results obtained include peak external quantum efficiencies of 6.2%, and an intensity of 210 µW/steradian at 10 mA.Keywords
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