An investigation of the 1.36 eV photoluminescence spectrum of heat-treated InP using Zeeman spectroscopy and strain effects
- 10 March 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (7) , 1233-1245
- https://doi.org/10.1088/0022-3719/17/7/016
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Optical properties of copper-related centres in InPJournal of Physics C: Solid State Physics, 1983
- An investigation of the deep level photoluminescence spectra of InP(Mn), InP(Fe), and of undoped InPJournal of Applied Physics, 1982
- Bound Exciton Time Decay and the Auger Effect in Zinc TelluridePhysica Status Solidi (b), 1982
- Acceptor excited states in indium phosphideSolid State Communications, 1979
- Photoluminescence characterization of solution and lec grown InPJournal of Electronic Materials, 1979
- Excitons bound to neutral donors in InPPhysical Review B, 1978
- The lattice dynamics of indium pnictidesJournal of Physics C: Solid State Physics, 1978
- Optical detection of conduction electron spin resonance in InPSolid State Communications, 1975
- Isoelectronic traps in semiconductors (experimental)Journal of Luminescence, 1973
- Lifetimes of Bound Excitons in CdSPhysical Review B, 1970