Isoelectronic traps in semiconductors (experimental)
- 31 December 1973
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 7, 51-78
- https://doi.org/10.1016/0022-2313(73)90059-8
Abstract
No abstract availableThis publication has 53 references indexed in Scilit:
- Efficient green electroluminescent junctions in GaPPublished by Elsevier ,2002
- Analysis of Recombination of Excitons Bound to Deep Neutral Donors and AcceptorsPhysical Review B, 1972
- Evaluation of the Zn-O Complex and Oxygen-Donor Electron-Capture Cross Sections in-Type GaP: Limits on the Quantum Efficiency of Red-Emitting (Zn,O)-Doped MaterialPhysical Review B, 1972
- Stimulated Emission and Laser Operation (cw, 77°K) of Direct and Indirect GaAs1−xPx on Nitrogen Isoelectronic Trap TransitionsJournal of Applied Physics, 1972
- Photoluminescence Associated with Multivalley Resonant States of the N Isoelectronic Trap inPhysical Review B, 1972
- Lifetimes of bound excitons in InPPhysica Status Solidi (b), 1971
- Excitons Bound to Ionized Impurities: Calculation of the Binding Energies of Exciton—Ionized-Donor ComplexesPhysical Review B, 1971
- The Effect of Nitrogen Doping on GaAs1−xPx Electroluminescent DiodesApplied Physics Letters, 1971
- Impurity Absorption in GaP Doped with Copper and OxygenPhysica Status Solidi (b), 1971
- Possibility of Exciton Binding to Ionized Impurities in SemiconductorsPhysical Review B, 1969