Photoluminescence Associated with Multivalley Resonant States of the N Isoelectronic Trap inIn1−xGaxP

Line emission above the direct interband threshold is observed at 77 °K in ${\mathrm{In}}_{1-x}{\mathrm{Ga}}_x\mathrm{P}$: N for $0.59\le x\le 0.71$. This emission is identified with a resonance state of the N isoelectronic trap whose properties are evaluated by standard solid-state scattering theory. For $x\ge 0.71$ the nitrogen trap state lies below both the direct and indirect interband thresholds. In this case the sharp, fast, nitrogen $A$ line can be distinguished clearly from the slower, broad N-N pair spectra.