SPECTRAL BEHAVIOR, CARRIER LIFETIME, AND PULSED AND cw LASER OPERATION (77 °K) OF In1−xGaxP
- 15 February 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (4) , 160-162
- https://doi.org/10.1063/1.1653608
Abstract
The spontaneous and laser spectral behavior of high‐quality In1−x Gax P grown slowly from an In solution in a small temperature gradient is described. The band‐to‐band carrier decay times are measured below (2.3 nsec, 77°K) and above (0.85 nsec) laser threshold by an optical phase shift technique and indicate low bulk and surface losses (s≤104 cm/sec). Continuous laser operation of a thin In1−x Gax P sample is demonstrated at a photoexcitation level of ∼103 W/cm2 (hνpump =1.96 eV).Keywords
This publication has 9 references indexed in Scilit:
- STIMULATED EMISSION IN In1 -xGaxPApplied Physics Letters, 1970
- SPONTANEOUS AND STIMULATED CARRIER LIFETIME AND THE SPECTRAL OUTPUT OF CdSe (77°K)Applied Physics Letters, 1970
- Effects of excitation intensity on the photoluminescence near the bandgap of n-InPSolid State Communications, 1969
- LASER RECOMBINATION TRANSITION IN p-TYPE GaAsApplied Physics Letters, 1969
- Laser Transitions in p-Type GaAs:SiJournal of Applied Physics, 1969
- THE LASER TRANSITION AND PHOTON ENERGY OF GaAs IN THE LIGHTLY-DOPED LIMITApplied Physics Letters, 1968
- Optically Pumped Thin-Platelet Semiconductor LasersJournal of Applied Physics, 1968
- MANY-BODY WAVELENGTH SHIFT IN A SEMICONDUCTOR LASERApplied Physics Letters, 1968
- The Determination of the Fluorescence Lifetimes of Dissolved Substances by a Phase Shift MethodThe Journal of Chemical Physics, 1953