Lifetimes of bound excitons in InP
- 1 December 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 48 (2) , 629-633
- https://doi.org/10.1002/pssb.2220480220
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Cyclotron resonance with epitaxial films of n type inpJournal of Physics C: Solid State Physics, 1971
- Lifetimes of Bound Excitons in CdSPhysical Review B, 1970
- Effect of Electron-Exciton Collisions on the Free-Exciton Linewidth in Epitaxial GaAsPhysical Review Letters, 1969
- Effects of excitation intensity on the photoluminescence near the bandgap of n-InPSolid State Communications, 1969
- Photoluminescence and Photoconductivity in Undoped Epitaxial GaAsPhysical Review B, 1969
- Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAsPhysical Review B, 1968
- Free-Carrier and Exciton Recombination Radiation in GaAsPhysical Review B, 1968
- Radiative Recombination in-Type InPPhysical Review B, 1967
- Exciton Absorption and Emission in InPPhysical Review B, 1964
- ELECTROLUMINESCENCESoviet Physics Uspekhi, 1962