The Effect of Nitrogen Doping on GaAs1−xPx Electroluminescent Diodes
- 15 September 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (6) , 184-186
- https://doi.org/10.1063/1.1653876
Abstract
The efficiency of GaAs1−x P x diodes for x>0.45 has been found to be greatly enhanced by the addition of nitrogen doping. The diodes were fabricated by means of Zndiffusion into vapor‐grown GaAs1−x P x doped with N and Te. The effects of nitrogen doping on diode efficiency, emission spectra, and brightness as a function of alloy composition are discussed.Keywords
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