Recombination processes associated with “Deep states” in gallium phosphide
- 1 January 1970
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 1-2, 398-419
- https://doi.org/10.1016/0022-2313(70)90054-2
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Interimpurity Recombinations Involving the Isoelectronic Trap Bismuth in Gallium PhosphidePhysical Review B, 1969
- Cancelation Theorem for Isoelectronic Impurity Binding EnergiesPhysical Review Letters, 1969
- BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYSApplied Physics Letters, 1968
- Toward a Theory of Isoelectronic Impurities in SemiconductorsPhysical Review B, 1968
- Symmetry of Electron States in GaPPhysical Review Letters, 1968
- Infra‐Red and Visible Photoluminescence in In1−xGaxPPhysica Status Solidi (b), 1968
- Absorption and Luminescence of Excitons at Neutral Donors in Gallium PhosphidePhysical Review B, 1967
- Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTePhysical Review B, 1967
- Isoelectronic Donors and AcceptorsPhysical Review Letters, 1966
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review Letters, 1965