Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
- 29 November 1965
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 15 (22) , 857-860
- https://doi.org/10.1103/physrevlett.15.857
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.15.857Keywords
This publication has 2 references indexed in Scilit:
- The Epitaxial Growth of GaP by a Ga[sub 2]O Vapor Transport MechanismJournal of the Electrochemical Society, 1964
- Bound Excitons in GaPPhysical Review B, 1963