Ultra-low-noise cryogenic high-electron-mobility transistors
- 1 March 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (3) , 249-256
- https://doi.org/10.1109/16.2448
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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