Low-Noise Cooled GASFET Amplifiers
- 1 October 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 28 (10) , 1041-1054
- https://doi.org/10.1109/tmtt.1980.1130223
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Field and thermionic-field emission in Schottky barriersPublished by Elsevier ,2002
- Resistance associated with FET gate metallizationIEEE Electron Device Letters, 1980
- Highly Reliable GaAs MESFET's with a Statistic Mean NF/sub min/ of 0.89 dB and a Standard Deviation of 0.07 dB at 4 GHzIEEE Transactions on Microwave Theory and Techniques, 1979
- Étude et réalisation d'amplificateur à transistor à effet de champ a l'AsGa refroidi à très basse températureRevue de Physique Appliquée, 1978
- Thermal effects in JFET and MOSFET devices at cryogenic temperaturesIEEE Transactions on Electron Devices, 1972
- Noise behavior of GaAs field-effect transistors with short gate lengthsIEEE Transactions on Electron Devices, 1972
- Microwave Properties of Schottky-barrier Field-effect TransistorsIBM Journal of Research and Development, 1970
- Microstrip Lines for Microwave Integrated CircuitsBell System Technical Journal, 1969
- Transport Properties of GaAsPhysical Review B, 1968
- Thermal Noise in Field-Effect TransistorsProceedings of the IRE, 1962