Interdiffusion of In and Ga in InGaN quantum wells
- 31 August 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (9) , 1281-1283
- https://doi.org/10.1063/1.122149
Abstract
Interdiffusion of In and Ga is observed in InGaN/GaN multiple quantum wells for annealing temperatures of 1300–1400 °C. Hydrostatic pressures of up to 15 kbar were applied to prevent surface decomposition. In as-grown material, x-ray diffraction spectra show InGaN diffraction peaks up to the fourth order. After annealing at 1400 °C for 15 min, only the zero-order peak is observed, as a result of compositional disordering of the quantum well superlattice. Transmission electron microscopy confirms that the superlattice is completely disordered after annealing at 1400 °C for 15 min.Keywords
This publication has 11 references indexed in Scilit:
- Nitrogen Effusion and Self-Diffusion in Ga14N/Ga15N Isotope HeterostructuresJapanese Journal of Applied Physics, 1998
- Phase separation in InGaN/GaN multiple quantum wellsApplied Physics Letters, 1998
- Nitride-based semiconductors for blue and green light-emitting devicesNature, 1997
- Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy compositionApplied Physics Letters, 1997
- Solid phase immiscibility in GaInNApplied Physics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981
- Interdiffusion between GaAs and AlAsApplied Physics Letters, 1976
- Dynamical theory of diffraction applicable to crystals with any kind of small distortionActa Crystallographica, 1962