Low threshold current 1.3 µm InAsP/InGaAsPlasers grown by gas-source molecular beam epitaxy
- 6 June 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (12) , 1103-1105
- https://doi.org/10.1049/el:19960700
Abstract
InAsP/InGaAsP highly strained MQW lasers grown by gas source molecular beam epitaxy with low threshold currents are reported. Threshold currents as low as 1.1 mA at 20°C and 6.1 mA at 100°C were measured. Lasers with antireflection/high reflection coated facets exhibited slope efficiencies as high as 0.48 mW/mA and output powers of 65 mW at 20°C.Keywords
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