Buried heterostructure laser fabricated using reactive ion etching and gas source molecular beam epitaxy
- 9 March 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (10) , 1211-1213
- https://doi.org/10.1063/1.107408
Abstract
Buried heterostructure lasers fabricated using reactive ion etching for stripe definition and gas source molecular beam epitaxy for blocking layer regrowth are presented for the first time. The structure design includes, in particular, a nonselective epitaxial regrowth step as well as a III-V material lift-off. Preliminary results show continuous wave operation with threshold currents of 43 mA and maximum output power of 17 mW per facet. This process is, in particular, very well suited for integration purposes and high yield 2 in. wafer processing.Keywords
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