Buried heterostructure laser fabricated using three-step gas source molecular beam epitaxy
- 16 September 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (12) , 1407-1408
- https://doi.org/10.1063/1.105321
Abstract
Buried heterostructure lasers fabricated using a three-step gas source molecular beam epitaxy (GSMBE) process are presented for the first time. We propose a new structure design compatible with nonselective regrowth for the blocking layers, therefore avoiding the use of a dielectric mask. The structure is terminated by a second overgrowth after a material lift-off. Preliminary results show cw operation with threshold currents of 60 mA for 800-μm-long devices and maximum output power up to 27 mW per facet.Keywords
This publication has 9 references indexed in Scilit:
- High quality InP and In1−xGaxAsyP1−y grown by gas source MBEJournal of Crystal Growth, 1991
- Chemical beam epitaxial selective growth of InP for laser fabricationApplied Physics Letters, 1991
- Buried‐heterostructure lasers fabricated byinsituprocessing techniquesApplied Physics Letters, 1990
- High performance DFB-MQW lasers at 1.5 μm grown by GSMBEElectronics Letters, 1990
- Multi-quantum-well lasers emitting at 1.55μm grown by GSMBEElectronics Letters, 1989
- High frequency buried heterostructure 1.5 μm GaInAsP/InP lasers, grown entirely by metalorganic vapour phase epitaxy in two epitaxial growth stepsElectronics Letters, 1988
- Planar-embedded InGaAsP/InP heterostructure laser with a semi-insulating InP current-blocking layer grown by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Gas source molecular beam epitaxy of GaInAs(P): Gas sources, single quantum wells, superlattice p-i-n's and bipolar transistorsJournal of Crystal Growth, 1987
- High-power, low-threshold BH lasers operating at 1.52 μm grown entirely by MOVPEElectronics Letters, 1985