A V-Band MMIC SPDT passive HEMT switch using impedance transformation networks
- 13 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 253-256 vol.1
- https://doi.org/10.1109/mwsym.2001.966882
Abstract
A V-Band MMIC single pole double throw (SPDT) switch using GaAs PHEMT process is designed, fabricated and tested. In contrast to the conventional resonant-type switch design method, this passive FET switch circuit utilizes impedance transformation to compensate the drain-source capacitance effect for the off-state in millimeter-wave frequency range. This SPDT switch has a measured isolation better than 30 dB for the off-state and 4 dB insertion loss for the on-state from 53 GHz to 61 GHz. The isolation performance of this design approach outmatches previously published FET switches in this frequency range.Keywords
This publication has 6 references indexed in Scilit:
- A high performance V-band monolithic FET transmit-receive switchPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Q-band high isolation GaAs HEMT switchesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A high power K/Ka-band monolithic T/R switchPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 77 GHz high-isolation coplanar transmit-receive switch using InGaAs/InP PIN diodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Compact DC-60-GHz HJFET MMIC switches using ohmic electrode-sharing technologyIEEE Transactions on Microwave Theory and Techniques, 1998
- DC-40 GHz and 20-40 GHz MMIC SPDT SwitchesIEEE Transactions on Microwave Theory and Techniques, 1987