Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contacts
- 1 March 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (5) , 2437-2444
- https://doi.org/10.1063/1.372198
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Alternative (Pd,Ti,Au) contacts to (Pt,Ti,Au) contacts for In0.53Ga0.47AsJournal of Applied Physics, 1998
- Comparison of PdGeTiPt and NiGeAu ohmic contacts to n-GaAs and PdGeTiPt and TiPd contacts to p+-GaAsJournal of Applied Physics, 1997
- Thermal stability of interfaces between metals and InP-based materialsJournal of Electronic Materials, 1996
- Preparation of p-type GaAs layers for ohmic contactJournal of Materials Science: Materials in Electronics, 1995
- Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1994
- Recent developments in ohmic contacts for III–V compound semiconductorsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- An initial investigation of the microstructure of Ti/Pd/Au ohmic contact structures for gaas microwave devices applicationsJournal of Electronic Materials, 1992
- Electrical Characteristics and Reliability of Pt/Ti/Pt/Au Ohmic Contacts to p-Type GaAsJapanese Journal of Applied Physics, 1991
- Temperature effects for Ti/GaAs(110) interface formation involving cluster and atom depositionPhysical Review B, 1989
- Solid-phase epitaxial Pd/Ge ohmic contacts to In1-xGaxAsyP1-y/InPIEEE Electron Device Letters, 1986