Antenna ratio definition for VLSI circuits [plasma etch damage]
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Until the plasma induced damage phenomenon is well understood and can be eliminated completely by optimizing process parameters, the risk of yield and reliability excursions must still be reduced by charging-robust product design. However, design solutions can only be effective if they are based on a proper definition of the antenna ratio. A number of studies of the charging damage layout dependency show that the antenna ratio concept, as applied at present, is inadequate. In this paper, a new and improved antenna ratio model is proposed and then applied to a product in order to determine its usefulness for detection of plasma etching induced damage conditions in IC layouts.Keywords
This publication has 4 references indexed in Scilit:
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- New Phenomena of Charge Damage in Plasma Etching: Heavy Damage Only through Dense-Line AntennaJapanese Journal of Applied Physics, 1993
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