Hot-electron effects in silicon quantized inversion layers

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Abstract
The mobility variations and carrier velocities are calculated for electrons in (100)-silicon quantum inversion layers at 300 and 77 K. Energy and momentum relaxation by intervalley phonons and acoustic phonons is considered. Scattering by local potential fluctuations and surface roughness is also considered. The calculations performed are based on a drifted Maxwellian distribution function and take into account repopulation of carriers among the various subbands. Formulas are presented for energy and momentum loss by intervalley phonons in both the zero- and first-order coupled cases. The calculations are compared with the data of Fang and Fowler at 300 K and very good agreement is found for the velocity-field curve.

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