Formation of high-quality silicon dioxide films by electron cyclotron resonance plasma oxidation and plasma-enhanced chemical vapour deposition
- 1 January 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 293 (1-2) , 52-62
- https://doi.org/10.1016/s0040-6090(96)08902-x
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Formation of High‐Quality Nitrided Silicon Dioxide Films Using Electron‐Cyclotron Resonance Chemical Vapor Deposition with Nitrous Oxide and SilaneJournal of the Electrochemical Society, 1996
- Comparison of damage and Si oxidation kinetics resulting from electron cyclotron resonance and distributed electron cyclotron resonance plasma processingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Silicon Oxidation and Fixed Oxide ChargeJournal of the Electrochemical Society, 1992
- Optical functions of silicon determined by two-channel polarization modulation ellipsometryOptical Materials, 1992
- Stability and spatial characterization of electron cyclotron resonance processing plasmasCanadian Journal of Physics, 1991
- Diagnostic techniques for plasma stability in electron cyclotron resonance plasma processingJournal of Vacuum Science & Technology A, 1990
- Silicon dioxide films fabricated by electron cyclotron resonant microwave plasmasIEEE Transactions on Electrical Insulation, 1990
- Oxide growth on silicon using a microwave electron cyclotron resonance oxygen plasmaJournal of Vacuum Science & Technology A, 1990
- Interspecimen Comparison of the Refractive Index of Fused Silica*,†Journal of the Optical Society of America, 1965
- Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen SubstanzenAnnalen der Physik, 1935