The effect of uniaxial stress on the two-phonon lattice absorption bands of silicon
- 1 June 1966
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society
- Vol. 88 (2) , 437-448
- https://doi.org/10.1088/0370-1328/88/2/316
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The influence of high uniaxial stress on the indirect absorption edge in siliconSolid State Communications, 1965
- Measurement of Third-Order Moduli of Silicon and GermaniumJournal of Applied Physics, 1964
- Anisotropic phonon scattering of electrons in germanium and siliconPhysics Letters, 1964
- The Raman effect in crystalsAdvances in Physics, 1964
- Critical-point analysis of the phonon spectra of diamond, silicon and germaniumProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1964
- Third-Order Elastic Moduli of GermaniumJournal of Applied Physics, 1961
- Lattice Absorption Bands in SiliconProceedings of the Physical Society, 1959
- Thermal Expansion of Some Crystals with the Diamond StructurePhysical Review B, 1958
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956
- Infrared Lattice Absorption in Ionic and Homopolar CrystalsPhysical Review B, 1955