Temperature dependence of creation and annealing of light-induced metastable defects in a-Si:H
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 164-166, 175-178
- https://doi.org/10.1016/0022-3093(93)90519-4
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Study of light-induced creation of defects in a-Si:H by means of single and dual-beam photoconductivityJournal of Non-Crystalline Solids, 1983
- Photoinduced metastable surface effects in boron-doped hydrogenated amorphous silicon filmsJournal of Applied Physics, 1983
- Optically induced conductivity changes in discharge-produced hydrogenated amorphous siliconJournal of Applied Physics, 1980