Optically induced conductivity changes in discharge-produced hydrogenated amorphous silicon
- 1 June 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (6) , 3262-3268
- https://doi.org/10.1063/1.328084
Abstract
Long exposure to light decreases the photoconductivity and dark conductivity of some samples of hydrogenated amorphous silicon (a‐Si : H). Annealing above ∼150 °C reverses the process. The effect occurs in the bulk of the films, and is associated with changes in density or occupation of deep gap states. High concentrations of P, B, or As quench the effect. Possible models involving hydrogen bond reorientation at a localized defect or electron‐charge transfer between defects are discussed. An example is shown where these conductivity changes do not affect the efficiency of an a‐Si : H solar cell.This publication has 18 references indexed in Scilit:
- Amorphous silicon MIS solar cellsNature, 1978
- Optical and photoconductive properties of discharge-produced amorphous siliconJournal of Applied Physics, 1977
- Doped amorphous semiconductorsAdvances in Physics, 1977
- Coordination of Arsenic Impurities in Amorphous Silicon-Hydrogen AlloysPhysical Review Letters, 1977
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977
- Quantitative analysis of hydrogen in glow discharge amorphous siliconApplied Physics Letters, 1977
- Amorphous silicon solar cellsIEEE Transactions on Electron Devices, 1977
- Amorphous silicon solar cellApplied Physics Letters, 1976
- Properties of glow-discharge deposited amorphous germanium and siliconJournal of Non-Crystalline Solids, 1970
- The Preparation and Properties of Amorphous SiliconJournal of the Electrochemical Society, 1969