Properties of glow-discharge deposited amorphous germanium and silicon
- 1 May 1970
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 3 (3) , 255-270
- https://doi.org/10.1016/0022-3093(70)90181-x
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- The Preparation and Properties of Amorphous SiliconJournal of the Electrochemical Society, 1969
- Electrical conduction in amorphous silicon and germaniumThin Solid Films, 1968
- Optical constants of amorphous silicon films near the main absorption edgeThin Solid Films, 1968
- Silicon oxide and nitride films deposited by an r.f. glow-dischargeThin Solid Films, 1968
- Electrical conduction in amorphous germaniumThin Solid Films, 1968
- Amorphous germanium and silicon: Structure and transport phenomenaMaterials Research Bulletin, 1968
- Electrical and Optical Properties of Amorphous GermaniumPhysical Review B, 1967
- Thermoelectric Power in Amorphous SiliconPhysica Status Solidi (b), 1967
- Optical Properties and Electronic Structure of Amorphous GermaniumPhysica Status Solidi (b), 1966
- Chemical vapour deposition promoted by r.f. dischargeSolid-State Electronics, 1965