Self-consistent energy levels in p-type delta-doped quantum wells in GaAs
- 15 March 1996
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (6) , 3351-3353
- https://doi.org/10.1063/1.361239
Abstract
We present a self‐consistent calculation of the electronic structure of p‐type delta‐doped quantum wells in GaAs. We examine the dependence of the energy levels, Fermi level and the depth of the well with impurity concentration. We show that in this system the Fermi level is very close to the valence band; the heavy‐hole subbands, as expected, contain many more states than the light‐hole ones. Our results agree quite well with the experimental results available for this system.This publication has 18 references indexed in Scilit:
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