Nucleation and growth of Fe on GaAs(001)-(2×4) studied by scanning tunneling microscopy
- 15 April 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (16) , R10481-R10484
- https://doi.org/10.1103/physrevb.53.r10481
Abstract
The nucleation and growth of Fe on GaAs(001)-(2×4) has been studied in situ with scanning tunneling microscopy. The growth is dominated by the structure of the substrate reconstruction. Fe initially forms stable six- to eight-atom two-dimensional islands confined to the first-layer As-dimer rows. The islands preferentially coalesce along the rows, leading to an anisotropic film morphology that persists for at least the first 50 Å of growth. These results provide insight into the growth mode of Fe on GaAs surfaces and have implications for the magnetic properties of ultrathin Fe films.Keywords
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