High-Purity, Isotopically Enriched Bulk Silicon
- 1 January 2005
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 152 (6) , G448
- https://doi.org/10.1149/1.1901674
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched siliconPhysical Review B, 2004
- Electron spin relaxation times of phosphorus donors in siliconPhysical Review B, 2003
- Anomalies in the NMR of silicon: Unexpected spin echoes in a dilute dipolar solidPhysical Review B, 2003
- Impurity Absorption Spectroscopy in: The Importance of Inhomogeneous Isotope BroadeningPhysical Review Letters, 2003
- Photoluminescence studies of isotopically enriched siliconPhysica Status Solidi (b), 2002
- “Intrinsic” Acceptor Ground State Splitting in Silicon: An Isotopic EffectPhysical Review Letters, 2002
- Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructuresPhysical Review A, 2000
- Growth and Characterization of the Isotopically Enriched 28Si Bulk Single CrystalJapanese Journal of Applied Physics, 1999
- Line shape of the no-phonon luminescence of excitons bound to phosphorus in carbon-doped siliconPhysical Review B, 1996
- The silicon-28 path to the Avogadro constant-first experiments and outlookIEEE Transactions on Instrumentation and Measurement, 1995