Graphoepitaxy of germanium on gratings with square-wave and sawtooth profiles

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Abstract
For Ge crystallized on amorphous SiO2 by a process yielding (111) texture on smooth substrates, in-plane crystallographic orientation has been obtained by using gratings with square-wave or sawtooth profiles for orientation. Successive layers of vacuum-evaporated Cr, Au, and Ge were deposited on heated SiO2 substrates that had been patterned with the gratings. The Ge crystallized on square-wave gratings had the (111) planes parallel to the substrate surface and the (211) planes parallel to the vertical facets of the gratings. The sawtooth gratings were fabricated with facets meetings at 70.5°, the smallest angle between (111) planes. In this case the (111) planes of the Ge were parallel to the grating facets, the 〈100〉 directions were perpendicular to the substrate and the 〈110〉 directions were parallel to the grating axis.