Comparative study of chemical and polarization characteristics of Pd/Si and Pd/SiOx/Si Schottky-barrier-type devices
- 1 March 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (3) , 1535-1537
- https://doi.org/10.1063/1.326106
Abstract
The chemical nature of semitransparent (∼125 Å) palladium on silicon Schottky‐barrier‐type devices was determined by complementary AES and ISS techniques. Postdeposition analyses of metal‐semiconductor (MS) and metal–thin‐insulator–semiconductor (MIS) devices prepared without heat treatment showed that palladium silicide is formed in the MS structures, while the presence of an ultrathin (∼30 Å) purposefully grown semiconductor oxide film inhibits the chemical reaction between Pd and Si in the metal overlayer. Chemical bonding information extracted from the AES data was correlated with barrier‐height measurements obtained from capacitance‐vs‐voltage (C‐V) and current‐vs‐voltage (I‐V) electrical characteristics of these devices.This publication has 11 references indexed in Scilit:
- Oxide thickness measurements up to 120 Å on silicon and aluminum using the chemically shifted auger spectraSurface Science, 1977
- A study of the charging and dissociation of SiO2 Surfaces by AESSurface Science, 1977
- Ion scattering and Auger electron spectrometry of superconducting ’’Nb3Ge’’ sputtered filmsJournal of Applied Physics, 1976
- Outline and comparison of the possible effects present in a metal–thin–film–insulator–semiconductorJournal of Applied Physics, 1976
- Metal-insulator-semiconductor solar cells: Theory and experimental resultsThin Solid Films, 1976
- An Auger analysis of the SiO2-Si interfaceJournal of Applied Physics, 1976
- Abstract: Stoichiometry of SiO2/Si interfacial regions. I. Ultrathin oxide filmsJournal of Vacuum Science and Technology, 1976
- Phase separation in silicon oxides as seen by Auger electron spectroscopyApplied Physics Letters, 1975
- Palladium silicide formation observed by Auger electron spectroscopyApplied Physics Letters, 1974
- Electron-irradiation effect in the Auger analysis of SiO2Journal of Applied Physics, 1974