4H-SiC power bipolar transistors with common emitter current gain <50
- 25 June 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 183-184
- https://doi.org/10.1109/drc.2002.1029590
Abstract
[[abstract]]Silicon carbide (SiC) is an attractive material for semiconductor power devices because of its superior physical and electrical properties. Prototype devices built on SiC have demonstrated performance well in excess of the best silicon devices. Among SiC power switching devices, bipolar transistors (BJTs) show excellent on-state characteristics at both room temperature and elevated temperatures (S.-H. Ryu et al., IEEE Electron Device Lett., vol. 22, pp. 124-126, 2001; Y. Tang et al, ibid., vol. 22, pp. 119-120, 2001). However, power BJTs require substantial base drive current given by JON/β. This base current can be minimized by developing high-voltage BJTs with higher β. In this paper we report high-voltage 4H-SiC BJTs with β greater than 50 (the highest values reported to date for a SiC BJT)[[fileno]]2030132030004[[department]]電機工程學This publication has 2 references indexed in Scilit:
- 1800 V NPN bipolar junction transistors in 4H-SiCIEEE Electron Device Letters, 2001
- An implanted-emitter 4H-SiC bipolar transistor with high current gainIEEE Electron Device Letters, 2001