Preparation and optical properties of InAs0.4P0.6nanocrystal alloy embedded in SiO2thin films
- 11 May 2001
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 16 (6) , 507-510
- https://doi.org/10.1088/0268-1242/16/6/317
Abstract
InAs0.4P0.6 nanocrystals with a size of 4.3-6.5 nm embedded in SiO2 thin films were prepared by the radio-frequency magnetron co-sputtering technique. X-ray diffraction and Raman spectra strongly suggest the existence of InAs0.4P0.6 nanocrystals in SiO2 matrices. The size distribution of the nanocrystals was observed by transmission electron microscopy. The optical transmission spectra indicate that the optical absorption band edge of the composite thin films can be modulated in a very large wavelength range by changing the preparation conditions. The InAs0.4P0.6 nanocrystals exhibit the behaviour of a direct bandgap. The marked blue shift of the optical absorption edge with respect to the bulk semiconductor can be explained by the quantum confinement effect.Keywords
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