InAsyP1−y/InP multiple quantum well optical modulators for solid-state lasers
- 1 April 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (13) , 1366-1368
- https://doi.org/10.1063/1.104310
Abstract
We report the operation of strained-layer InAsyP1−y/InP multiple quantum well optical modulators at wavelengths compatible with solid-state lasers such as neodymium-doped yttrium aluminum garnet. A structure having 50 periods of 100 Å InAsyP1−y quantum wells with 100 Å InP barriers is described that has an exciton peak at 1.05 μm and a single pass transmission contrast ratio of 1.4. Favorable comparison is made to similar InxGa1−xAs/GaAs structures.Keywords
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