Determination and analysis of the performance and degradation of a-Si modules using outdoor, simulator and open-circuit-voltage decay (OCVD) measurements
- 1 January 1988
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Determination of lifetime and surface recombination velocity of p-n junction solar cells and diodes by observing transientsIEEE Transactions on Electron Devices, 1987
- Amorphous-silicon module intercell corrosionAIP Conference Proceedings, 1987
- Analysis of stability of amorphous silicon solar cellsAIP Conference Proceedings, 1987
- Stress and microstructural effects on equilibrium and non-equilibrium defects in amorphous siliconAIP Conference Proceedings, 1987