Growth of ultrapure InP by atmospheric pressure organometallic vapor phase epitaxy
- 13 October 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (15) , 963-965
- https://doi.org/10.1063/1.97496
Abstract
We report the growth and characterization of ultrapure InP using trimethylindium and phosphine by atmospheric pressure organometallic vapor phase epitaxy (APOMVPE). The 77 K mobility of 131 000 cm2 /V s is the highest ever obtained by APOMVPE and among the highest ever measured for InP using any growth technique. The low‐temperature photoluminescence measurements reveal that impurity reduction occurs at higher growth temperatures.Keywords
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