The development and application of a SiSiO2 interface-trap measurement system based on the staircase charge-pumping technique

This publication has 12 references indexed in Scilit:

• A new charge pumping method of measuring Si-SiO2 interface states
  Journal of Applied Physics, 1987
• A reliable approach to charge-pumping measurements in MOS transistors
  IEEE Transactions on Electron Devices, 1984
• Determination of the spatial variation of interface trapped charge using short-channel MOSFET's
  IEEE Transactions on Electron Devices, 1983
• Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFET's
  IEEE Electron Device Letters, 1983
• The use of charge pumping currents to measure surface state densities in MOS transistors
  Solid-State Electronics, 1976
• Theory of dynamic charge current and capacitance characteristics in MIS systems containing distributed surface traps
  Solid-State Electronics, 1973
• Theory of dynamic charge and capacitance characteristics in MIS systems containing discrete surface traps
  Solid-State Electronics, 1973
• Charge pumping in MOS devices
  IEEE Transactions on Electron Devices, 1969
• Statistics of the Recombinations of Holes and Electrons
  Physical Review B, 1952
• On the Surface States Associated with a Periodic Potential
  Physical Review B, 1939