Theory of dynamic charge current and capacitance characteristics in MIS systems containing distributed surface traps
- 31 January 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (1) , 53-66
- https://doi.org/10.1016/0038-1101(73)90125-1
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- MOS STUDY OF INTERFACE-STATE TIME CONSTANT DISPERSIONApplied Physics Letters, 1967
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966
- The effects of oxide traps on the MOS capacitanceIEEE Transactions on Electron Devices, 1965
- Limitations of the MOS capacitance method for the determination of semiconductor surface propertiesIEEE Transactions on Electron Devices, 1965
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Field Effect‐Capacitance Analysis of Surface States on SiliconPhysica Status Solidi (b), 1963
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962
- Semiconductor Surface VaractorBell System Technical Journal, 1962
- Physical Theory of Semiconductor SurfacesPhysical Review B, 1955