MOS STUDY OF INTERFACE-STATE TIME CONSTANT DISPERSION

15 January 1967

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 10 (2) , 60-62
https://doi.org/10.1063/1.1754846

Abstract

The time constant dispersion of states at the Si–SiO₂ interface measured by the MOS conductance technique in the depletion region is too broad to be explained by the continuum model alone. By assuming that built‐in charges and charged interface states are randomly distributed over the plane of the interface, the resulting fluctuations of surface potential lead to a time constant dispersion which agrees with experiment. An explanation is also given of the single time constant observed at each bias in weak inversion for the continuum of states.

Keywords

TIME CONSTANT

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