Band-to-band impact ionisation rates in ZnS
- 10 August 1987
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 20 (22) , L499-L503
- https://doi.org/10.1088/0022-3719/20/22/003
Abstract
The band-to-band impact ionisation rate has been found in ZnS from measurements of the multiplication of the photocurrent in Schottky diodes. The ionisation coefficient varies with field approximately as alpha O exp(-b/E) with b approximately=1.3*107 V cm-1.Keywords
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