Current-voltage characteristics of Schottky barrier diodes with dynamic interfacial defect state occupancy
- 1 July 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 43 (7) , 1153-1160
- https://doi.org/10.1109/16.502427
Abstract
No abstract availableKeywords
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