Liquid-phase epitaxy and characterization of Si1−xGex layers on Si substrates
- 1 September 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (5) , 2158-2163
- https://doi.org/10.1063/1.346572
Abstract
Liquid‐phase epitaxy allows SiGe alloys of good quality to be grown on Si substrates. We deposit single crystalline, n‐type Si1−xGex films with 0.7<x7 cm−2. Photoluminescence measurements show well‐resolved peaks with the smallest linewidths reported so far for epitaxial SiGe. Hall‐effect measurements yield electron concentrations around 1×1016 cm−3 and room‐temperature electron mobilities of up to 340 cm2/V s.This publication has 45 references indexed in Scilit:
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