Structural investigation by X-ray diffraction of GaAs epilayers and AlAs/GaAs superlattices grown on Si by MBE
- 1 August 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (8) , 617-621
- https://doi.org/10.1088/0268-1242/4/8/003
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Degradation of GaAs lasers and light-emitting diodes on silicon substratesMaterials Science and Engineering: B, 1988
- Optical and structural properties of GaAs grown on (100) Si by molecular-beam epitaxyJournal of Applied Physics, 1988
- Substrate orientation and processing effects on GaAs/Si misorientation in GaAs-on-Si grown by MBEJournal of Electronic Materials, 1988
- New approach to growth of high-quality GaAs layers on Si substratesApplied Physics Letters, 1987
- Improvements in the heteroepitaxy of GaAs on SiApplied Physics Letters, 1987
- AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVDJapanese Journal of Applied Physics, 1987
- High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interfaceApplied Physics Letters, 1986
- Ion beam sputter deposited zinc telluride filmsJournal of Vacuum Science & Technology A, 1986
- Improved assessment of structural properties of As/GaAs heterostructures and superlattices by double-crystal x-ray diffractionPhysical Review B, 1986
- Defects in epitaxial multilayers I. Misfit dislocationsJournal of Crystal Growth, 1974