AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD
- 1 March 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (3A) , L198
- https://doi.org/10.1143/jjap.26.l198
Abstract
We report the room-temperature pulsed operation of AlGaAs/GaAs multi-quantum well (MQW) laser diodes (LD's) fabricated on Si substrates by MOCVD. The lowest threshold current obtained in 7 µm-wide oxide stripe MQW LD's was 170 mA at room temperature (at 293 K). The average threshold current and peak wavelength among the tested 60 chips were 324 mA and 864.3 nm, respectively. The maximum differential quantum efficiency was 14.0%.Keywords
This publication has 9 references indexed in Scilit:
- Low threshold, optically pumped, room-temperature laser oscillation at 0.88 μm from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Ge-coated Si substratesApplied Physics Letters, 1986
- Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)SiApplied Physics Letters, 1986
- Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Room-temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrateApplied Physics Letters, 1985
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVDJapanese Journal of Applied Physics, 1985
- Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) SubstrateJapanese Journal of Applied Physics, 1984
- Metal-semiconductor field-effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxyApplied Physics Letters, 1984
- AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrateApplied Physics Letters, 1984
- GaAs light-emitting diodes fabricated on Ge-coated Si substratesApplied Physics Letters, 1984