Gauging film thickness: A comparison of an x-ray diffraction technique with Rutherford backscattering spectrometry
- 15 January 1985
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (2) , 643-645
- https://doi.org/10.1063/1.334757
Abstract
An x‐ray diffraction technique for determining thin‐film thickness is presented which should prove to be a valuable alternative to the array of spectroscopies (Rutherford backscattering spectrometry, Auger electron spectroscopy, etc.) currently favored for these measurements. Some of the virtues of this x‐ray diffraction approach are its nondestructive nature, fast data acquisition rate (enabling in situ observations), thickness resolution better than 5 nm, and conventional equipment requirements. Results are shown for Pd2Si thin films grown during isothermal annealing of Pd coatings (100 nm) on Si at 200 °C for various amounts of time. A comparison of these x‐ray measurements with Rutherford backscattering spectrometry data taken from the same specimens is used to demonstrate the validity of the x‐ray technique.This publication has 1 reference indexed in Scilit:
- Implantation-induced strains in silicon studied by X-ray interferometry and topographyPhilosophical Magazine A, 1978