Influence of growth parameters on CdTe low temperature thermal conductivity
- 1 June 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (6) , 3171-3174
- https://doi.org/10.1063/1.328066
Abstract
The conditions of the growth of single crystals of CdTe produce marked changes in their thermal conductivities. This study shows the influence of some specific parameters of the growth conditions: (i) material purity, and (ii) growth temperature and growth rate on the microprecipitate concentration (S?1014 cm−3 with a?100 Å) in CdTe obtained by the ’’traveling heater method’’. An upper limit of the homogeneity region is deduced that takes into account all the defects, including nonelectrically active ones.This publication has 12 references indexed in Scilit:
- Phonon–defect interaction in dislocation-free GaAsPhysica Status Solidi (a), 1977
- Phonons-defects interactions in CdTeRevue de Physique Appliquée, 1977
- Thermal conductivity of Cr-doped GaAs at low temperatureJournal of Applied Physics, 1975
- Influence of Clusters on the Thermal Conductivity of GaAsPhysica Status Solidi (b), 1974
- Cadmium telluride, grown from tellurium solution, as a material for nuclear radiation detectorsPhysica Status Solidi (a), 1970
- Réalisation d'un dispositif de mesure de la conductibilité thermique des solides à basses températuresRevue de Physique Appliquée, 1968
- Thermal Conductivity of Some Alkali Halides Containing Divalent Impurities. II. Precipitate ScatteringPhysical Review B, 1967
- Phonon Scattering in Semiconductors From Thermal Conductivity StudiesPhysical Review B, 1964
- Thermal Conductivity and Phonon Scattering by Magnetic Impurities in CdTePhysical Review B, 1964
- Model for Lattice Thermal Conductivity at Low TemperaturesPhysical Review B, 1959